s mhop microelectronics c orp. a STM6967 symbolv ds v gs i dm w a p d c 2.5 -55 to 150 i d units parameter -60 -4 -22 vv 20 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r ds(on) (m ) max -60v -4a 125 @ vgs=-4.5v 86 @ vgs=-10v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a maximum power dissipation a operating junction and storage temperature range t j , t stg ver 1.0 www.samhop.com.tw apr,28,2010 1 details are subject to change without notice. t a =25 c r ja thermal resistance, junction-to-ambient a c/w 50 p-channel enhancement mode field effect transistor e as single pulse avalanche energy d mj t a =70 c a t a =70 c w s o-8 1 -3.2 1.6 49 green product 4 3 2 1 d d d d gs s 5 6 7 8 s
symbol min typ max units bv dss -60 v -1 i gss 10 ua v gs(th) -2.0 v 69 g fs 15 s v sd c iss 1110 pf c oss 79 pf c rss 56 pf q g 23 nc 19 nc q gs 71 nc q gd 37 t d(on) 11.5 ns t r 2.9 ns t d(off) 6.2 ns t f ns gate-drain charge v ds =-15v,v gs =0v switching characteristics gate-source charge v dd =-15v i d =-1a v gs =-10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =-10v , i d =-4a v ds =-5v , i d =-4a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =-250ua v ds =-48v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =-250ua reverse transfer capacitance on characteristics -4.0 v gs =-4.5v , i d =-3.3a 93 m ohm c f=1.0mhz c v ds =-15v,i d =-4a, v gs =-10v drain-source diode characteristics and maximum ratings v gs =0v,i s =-1a -0.79 -1.2 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 30v.(see figure13) _ _ STM6967 ver 1.0 www.samhop.com.tw apr,28,2010 2 _ -2.4 86 125 nc 24 v ds =-15v,i d =-4a,v gs =-10v v ds =-15v,i d =-4a,v gs =-4.5v
STM6967 ver 1.0 www.samhop.com.tw apr,28,2010 3 t j ( c ) -i d , drain current(a) -v ds , drain-to-source voltage(v) figure 1. output characteristics -v gs , gate-to-source voltage(v) figure 2. transfer characteristics -i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized -i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature 180 150 120 90 60 30 3 6 9 12 15 1 v g s =-10v v g s =-4.5v 1512 96 3 0 0.5 1 1.5 2 2.5 3 - vgs =3.5v - vgs= 5v -vg s=4 .5v -vgs =1 0v 0 25 c 10 86 4 2 0 0 0.9 5.4 4.5 3.6 2.7 1.8 0 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 25 50 75 100 125 150 v g s =-10v i d =-4a 125 c v g s =-4.5v i d =-3.3a -v gs= 4v -55 c 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 v ds =v g s i d =250ua -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 i d =250ua
STM6967 ver 1.0 www.samhop.com.tw apr,28,2010 4 r ds(on) (m ) -v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage -is, source-drain current(a) -v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) -v ds , drain-to-source voltage(v) figure 9. capacitance -v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics -i d , drain current(a) -v ds , drain-source voltage(v) figure 12. maximum safe operating area 240 200 160 120 80 40 0 2 4 6 8 10 0 25 c 125 c 75 c i d =-4a 100 10 1 60 1 6 10 100 vds=-15v,id=-1a vgs=-10v td(off ) tr tf td(on) 20.0 10.0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 0 5 10 15 20 25 30 ciss coss 1800 1500 1200 900 600 300 0 crss 8 10 64 2 0 0 3 9 12 18 21 24 v ds =-15v i d =-4a 6 15 0.1 1 10 10 1 0.1 0.03 25 c 125 c 75 c 60 r ds (o n) l i mit v gs =-10v single pulse t a =25 c 1 00us 1m s 10ms 1 0 0 m s 1s dc
t p v ( br )d ss i a s f igure 13a. f igure 13b. u ncl am p e d s in d u ct i ve t e t ci r c u i t o f r m w ave s u ncl am p e d in d u ct i ve STM6967 ver 1.0 www.samhop.com.tw apr,28,2010 5 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 10 100 1000 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve p dm t 1 t 2 1. r thj a (t)=r (t) * r j a 2. r j a =s ee datas heet 3. t j m- t a = p dm * r j a (t ) 4. duty c ycle, d=t 1 /t 2 th th th single pulse 0.01 0.02 0.05 0.1 0.2 0.5 1 r g i a s 0.0 1 t p d .u .t l v d s + - d d 20v v
STM6967 ver 1.0 www.samhop.com.tw apr,28,2010 6 package outline dimensions so-8 s y mb ols min min 0.053 0.004 0.189 0.150 0.228 0.016 0 1.35 0.10 4.80 3.81 5.79 0.41 0 max max 0.069 0.010 0.196 0.157 0.244 0.050 8 1.75 0.25 4.98 3.99 6.20 1.27 8 millime t e r s inc he s a a1 d eh l 1 e b h e l a1 a c d 0.05 typ. 0.016 typ. 0.008 typ. 0.015x45
STM6967 www.samhop.com.tw apr,28,2010 7 so-8 tape and reel data so-8 carrier tape so-8 reel unit: @ package sop 8n 150 ? a0 b0 k0 d0 d1 e e1 e2 p0 p1 p2 t 6.50 5.25 2.10 ? 1.5 (min) ? 1.55 12.0+0.3 - 0.1 1.75 5.5 2 0.10 8.0 2 0.10 4.0 2 0.10 2.0 2 0.10 0.30 2 0.013 unit: @ tape size 12 @ reel size ? 330 m n w w1 h k s g r v 330 2 1 62 2 1.5 12.4 + 0.2 16.8 - 0.4 ? 12.75 + 0.15 2.0 2 0.15 ver 1.0 a a e e1 e2 p0 d0 a0 b0 d1 p1 p2 feeding direction t k0 section a-a 2 0.15 2 0.10 2 0.10 2 0.10 2 0.10 terminal number 1 w1 n w m s k h g v r
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